FDMC86260ET150

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Mfr.Part #
FDMC86260ET150
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 150V 5.4A/25A PWR33
Stock
2,750
In Stock :
2,750

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
9.5 ns
Factory Lead Time :
10 Weeks
Turn-Off Delay Time :
17 ns
Current - Continuous Drain (Id) @ 25°C :
5.4A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Weight :
152.7mg
Rise Time :
2ns
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
not_compliant
Pbfree Code :
yes
Series :
PowerTrench®
Input Capacitance (Ciss) (Max) @ Vds :
1330pF @ 75V
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
34m Ω @ 5.4A, 10V
Drain to Source Breakdown Voltage :
150V
Mounting Type :
Surface Mount
Power Dissipation-Max :
2.8W Ta 65W Tc
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
25A
JESD-609 Code :
e3
ECCN Code :
EAR99
Mount :
Surface Mount
Fall Time (Typ) :
3.3 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Package / Case :
8-PowerWDFN
Datasheets
FDMC86260ET150
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC86260ET150 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, FDMC86260ET150 pinout, FDMC86260ET150 datasheet PDF, FDMC86260ET150 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86260ET150 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC86260ET150


N-Channel Tape & Reel (TR) 34m Ω @ 5.4A, 10V ±20V 1330pF @ 75V 21nC @ 10V 8-PowerWDFN

FDMC86260ET150 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1330pF @ 75V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

FDMC86260ET150 Features


a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 17 ns


FDMC86260ET150 Applications


There are a lot of ON Semiconductor
FDMC86260ET150 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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