FDMC86260ET150
- Mfr.Part #
- FDMC86260ET150
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 5.4A/25A PWR33
- Stock
- 2,750
- In Stock :
- 2,750
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 9.5 ns
- Factory Lead Time :
- 10 Weeks
- Turn-Off Delay Time :
- 17 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta 25A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Weight :
- 152.7mg
- Rise Time :
- 2ns
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 75V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 5.4A, 10V
- Drain to Source Breakdown Voltage :
- 150V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.8W Ta 65W Tc
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 25A
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 3.3 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Package / Case :
- 8-PowerWDFN
- Datasheets
- FDMC86260ET150

N-Channel Tape & Reel (TR) 34m Ω @ 5.4A, 10V ±20V 1330pF @ 75V 21nC @ 10V 8-PowerWDFN
FDMC86260ET150 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1330pF @ 75V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
FDMC86260ET150 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 17 ns
FDMC86260ET150 Applications
There are a lot of ON Semiconductor
FDMC86260ET150 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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