FDMC86260

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Mfr.Part #
FDMC86260
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N CH 150V 5.4A POWER 33
Stock
16,284
In Stock :
16,284

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Base Part Number :
FDMC86260
Vgs (Max) :
±20V
Turn On Delay Time :
9.5 ns
Factory Lead Time :
10 Weeks
Case Connection :
DRAIN
Power Dissipation-Max :
2.3W Ta 54W Tc
Terminal Finish :
Tin (Sn)
Drain Current-Max (Abs) (ID) :
5.4A
Published :
2010
Avalanche Energy Rating (Eas) :
121 mJ
Length :
3.3mm
Fall Time (Typ) :
3.3 ns
Mounting Type :
Surface Mount
Weight :
152.7mg
Height :
750μm
Terminal Position :
Dual
Transistor Application :
SWITCHING
Package / Case :
8-PowerWDFN
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
34m Ω @ 5.4A, 10V
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
MO-240BA
Number of Terminations :
5
Power Dissipation :
54W
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Drain to Source Breakdown Voltage :
150V
Width :
3.3mm
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
5.4A Ta 16A Tc
Series :
PowerTrench®
JESD-30 Code :
S-PDSO-N5
Input Capacitance (Ciss) (Max) @ Vds :
1330pF @ 75V
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Lead Free :
Lead Free
Radiation Hardening :
No
JESD-609 Code :
e3
Turn-Off Delay Time :
17 ns
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
8
Rise Time :
2ns
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.034Ohm
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Continuous Drain Current (ID) :
16A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC86260 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:FDMC86260, Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, FDMC86260 pinout, FDMC86260 datasheet PDF, FDMC86260 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86260 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC86260


N-Channel Tape & Reel (TR) 34m Ω @ 5.4A, 10V ±20V 1330pF @ 75V 21nC @ 10V 8-PowerWDFN

FDMC86260 Description


FDMC86260 is an N-Channel Power Trench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMC86260 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor FDMC86260 is in the Power-33-8 package with 54w power dissipation. 



FDMC86260 Features


  • Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A

  • Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A

  • High-performance technology for extremely low RDS(on)

  • 100% UIL Tested

  • Termination is Lead-free



FDMC86260 Applications


  • cellular phones 

  • laptop computers

  • photovoltaic systems 

  • wind turbines

  • shunt voltage regulator and the series voltage regulator


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