FDMC86259P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

152.7mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerWDFN

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

JESD-30 Code :

S-PDSO-N5

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta 13A Tc

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Number of Pins :

8

Element Configuration :

Single

Terminal Form :

NO LEAD

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

13A

Rise Time :

3.3ns

Reach Compliance Code :

not_compliant

Height :

750μm

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

JESD-609 Code :

e3

Width :

3.4mm

Terminal Position :

Dual

Factory Lead Time :

20 Weeks

Mount :

Surface Mount

Number of Channels :

1

Turn On Delay Time :

12 ns

Power Dissipation-Max :

2.3W Ta 62W Tc

Turn-Off Delay Time :

22 ns

JEDEC-95 Code :

MO-240BA

Number of Terminations :

5

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

3.4mm

Drain to Source Voltage (Vdss) :

150V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

2045pF @ 75V

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Fall Time (Typ) :

9.6 ns

Gate to Source Voltage (Vgs) :

25V

Drain Current-Max (Abs) (ID) :

3.2A

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

107m Ω @ 3A, 10V