FDMC86244

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Height :

750μm

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 10V

Number of Terminations :

5

Turn-Off Delay Time :

9.9 ns

Published :

2006

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta 9.4A Tc

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

2.3 ns

FET Type :

N-Channel

Element Configuration :

Single

Nominal Vgs :

2.6 V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Package / Case :

8-PowerWDFN

Threshold Voltage :

2.6V

Width :

3.3mm

Power Dissipation :

26W

JESD-609 Code :

e4

Length :

3.3mm

Drain to Source Breakdown Voltage :

150V

Continuous Drain Current (ID) :

9.4A

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Series :

PowerTrench®

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

180mg

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 75V

Power Dissipation-Max :

2.3W Ta 26W Tc

Rise Time :

1.5ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Vgs (Max) :

±20V

JESD-30 Code :

S-PDSO-N5

Rds On (Max) @ Id, Vgs :

134m Ω @ 2.8A, 10V

Turn On Delay Time :

5.3 ns

ECCN Code :

EAR99

Terminal Position :

Dual

Radiation Hardening :

No