FDMC86184
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- Mfr.Part #
- FDMC86184
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 57A 8PQFN
- Stock
- 23,295
- In Stock ：
- 23,295
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 152.7mg
- Package / Case :
- 8-PowerWDFN
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 57A Tc
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 6V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 110μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2090pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 21A, 10V
- Power Dissipation-Max :
- 54W Tc
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 100V
- Datasheets
- FDMC86184
N-Channel Tape & Reel (TR) 8.5m Ω @ 21A, 10V ±20V 2090pF @ 50V 20nC @ 6V 100V 8-PowerWDFN
FDMC86184 Description
This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMC86184 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A
Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
FDMC86184 Applications
Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC
Motor Drive
Solar
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