FDMC86160ET100
- Mfr.Part #
- FDMC86160ET100
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9A/43A POWER33
- Stock
- 5,650
- In Stock :
- 5,650
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- MO-240BA
- Power Dissipation-Max :
- 2.8W Ta 65W Tc
- Additional Feature :
- ULTRA LOW RESISTANCE
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 16 ns
- Package / Case :
- 8-PowerWDFN
- Rise Time :
- 3.6ns
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 43A
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.014Ohm
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 152.7mg
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pulsed Drain Current-Max (IDM) :
- 204A
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 43A Tc
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 3.4 ns
- Turn On Delay Time :
- 9.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- S-PDSO-N5
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 11 Weeks
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 9A, 10V
- Drain Current-Max (Abs) (ID) :
- 9A
- Datasheets
- FDMC86160ET100

N-Channel Tape & Reel (TR) 14m Ω @ 9A, 10V ±20V 1290pF @ 50V 22nC @ 10V 8-PowerWDFN
FDMC86160ET100 Description
Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. The on-state resistance has been optimized for this process. This device is particularly suited for small-space applications requiring ultra-low RDS(on), like high-performance VRM, POL, and orring functionalities.
FDMC86160ET100 Features
-
Extended TJ rating to 175°C
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
-
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
-
High-performance technology for extremely low rDS(on)
-
Termination is Lead-free and RoHS Compliant
FDMC86160ET100 Applications
-
DC-DC Merchant Power Supply
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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