FDMC86160ET100

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Mfr.Part #
FDMC86160ET100
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 100V 9A/43A POWER33
Stock
5,650
In Stock :
5,650

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
MO-240BA
Power Dissipation-Max :
2.8W Ta 65W Tc
Additional Feature :
ULTRA LOW RESISTANCE
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Element Configuration :
Single
FET Type :
N-Channel
Turn-Off Delay Time :
16 ns
Package / Case :
8-PowerWDFN
Rise Time :
3.6ns
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
43A
Mounting Type :
Surface Mount
Pbfree Code :
yes
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.014Ohm
Mount :
Surface Mount
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Weight :
152.7mg
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Case Connection :
DRAIN
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
1290pF @ 50V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Pulsed Drain Current-Max (IDM) :
204A
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
9A Ta 43A Tc
Series :
PowerTrench®
Fall Time (Typ) :
3.4 ns
Turn On Delay Time :
9.7 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
S-PDSO-N5
Packaging :
Tape and Reel (TR)
Factory Lead Time :
11 Weeks
Drain to Source Breakdown Voltage :
100V
Number of Pins :
8
Number of Terminations :
5
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Transistor Element Material :
SILICON
Terminal Form :
NO LEAD
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Rds On (Max) @ Id, Vgs :
14m Ω @ 9A, 10V
Drain Current-Max (Abs) (ID) :
9A
Datasheets
FDMC86160ET100
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC86160ET100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerWDFN, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, Operating Temperature:-55°C~175°C TJ, FDMC86160ET100 pinout, FDMC86160ET100 datasheet PDF, FDMC86160ET100 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86160ET100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC86160ET100


N-Channel Tape & Reel (TR) 14m Ω @ 9A, 10V ±20V 1290pF @ 50V 22nC @ 10V 8-PowerWDFN

FDMC86160ET100 Description


Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. The on-state resistance has been optimized for this process. This device is particularly suited for small-space applications requiring ultra-low RDS(on), like high-performance VRM, POL, and orring functionalities.



FDMC86160ET100 Features


  • Extended TJ rating to 175°C

  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A

  • Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A

  • High-performance technology for extremely low rDS(on)

  • Termination is Lead-free and RoHS Compliant



FDMC86160ET100 Applications


  • DC-DC Merchant Power Supply

  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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