FDMC86160
- Mfr.Part #
- FDMC86160
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N CH 100V 9A POWER33
- Stock
- 24,854
- In Stock :
- 24,854
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- S-PDSO-N5
- Pulsed Drain Current-Max (IDM) :
- 50A
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 16 ns
- Mounting Type :
- Surface Mount
- Length :
- 3.3mm
- Fall Time (Typ) :
- 3.4 ns
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 9.7 ns
- Weight :
- 152.7mg
- Number of Terminations :
- 5
- Power Dissipation :
- 54W
- Width :
- 3.3mm
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 43A Tc
- ECCN Code :
- EAR99
- Published :
- 2010
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 9A, 10V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- Rise Time :
- 3.6ns
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 100V
- Height :
- 750μm
- Threshold Voltage :
- 2.9V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 50V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- JEDEC-95 Code :
- MO-240BA
- Continuous Drain Current (ID) :
- 43A
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Package / Case :
- 8-PowerWDFN
- Case Connection :
- DRAIN
- Datasheets
- FDMC86160
FDMC86160 Documents

N-Channel Tape & Reel (TR) 14m Ω @ 9A, 10V ±20V 1290pF @ 50V 22nC @ 10V 8-PowerWDFN
FDMC86160 MOSFET Description
The FDMC86160 N-Channel MOSFET features low on-resistance for sufficient current flow and adequate power savings. For switching performance, the FDMC86160 has a low gate charge (22 nc at top); besides, this MOSFET has a maximum turn-on delay time of 19 ns and the maximum rise time is specified as 10 ns.
FDMC86160 MOSFET Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
-
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
-
High-performance technology for extremely low rDS(on)
-
Termination is Lead-free and RoHS Compliant
FDMC86160 MOSFET Applications
-
DC-DC Merchant Power Supply
-
LED Backlighting
-
Repetitive UIS Rating System
-
LLC Resonant Converters
-
Synchronous Rectification Applications
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