FDMC86139P
- Mfr.Part #
- FDMC86139P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 4.4A/15A 8MLP
- Stock
- 16,646
- In Stock :
- 16,646
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 165.33333mg
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 17 ns
- ECCN Code :
- EAR99
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Pbfree Code :
- yes
- Published :
- 2017
- Turn On Delay Time :
- 11 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Series :
- PowerTrench®
- Number of Channels :
- 1
- Length :
- 3.3mm
- Number of Elements :
- 1
- Number of Pins :
- 8
- Power Dissipation :
- 40W
- JESD-609 Code :
- e4
- Turn Off Time-Max (toff) :
- 40ns
- Height :
- 800μm
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta 15A Tc
- Pulsed Drain Current-Max (IDM) :
- 30A
- Number of Terminations :
- 5
- Threshold Voltage :
- -3V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 100V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 25V
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- -100V
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1335pF @ 50V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- -4.4A
- Drain-source On Resistance-Max :
- 0.067Ohm
- Width :
- 3.3mm
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerWDFN
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-30 Code :
- S-PDSO-N5
- Turn On Time-Max (ton) :
- 30ns
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 67m Ω @ 4.4A, 10V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±25V
- Rise Time :
- 2.5ns
- Max Junction Temperature (Tj) :
- 150°C
- Fall Time (Typ) :
- 4 ns
- FET Type :
- P-Channel
- Datasheets
- FDMC86139P

P-Channel Tape & Reel (TR) 67m Ω @ 4.4A, 10V ±25V 1335pF @ 50V 22nC @ 10V 100V 8-PowerWDFN
FDMC86139P Description
The FDMC86139P P-Channel MOSFET is produced using On Semiconductor's advanced PowerTrench technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
FDMC86139P Features
-
Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
-
This product is optimised for fast switching applications as well as load switch applications
-
100% UIL Tested
-
RoHS Compliant
-
No SVHC
-
Lead Free
FDMC86139P Applications
-
Active Clamp Switch
-
Load Switch
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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