FDMC86106LZ

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Mfr.Part #
FDMC86106LZ
Manufacturer
Fairchild Semiconductor
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 100V 3.3A POWER33
Stock
3,251
In Stock :
3,251

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
103 mΩ
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
Packaging :
Cut Tape (CT)
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Published :
2013
Number of Elements :
1
Height :
750μm
Continuous Drain Current (ID) :
7.5A
Turn On Delay Time :
4.5 ns
Power Dissipation :
19W
Min Operating Temperature :
-55°C
Power Dissipation-Max :
2.3W Ta 19W Tc
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
3.3A Ta 7.5A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
100V
Operating Temperature :
-55°C~150°C TJ
Series :
PowerTrench®
Turn-Off Delay Time :
10 ns
FET Type :
N-Channel
Mounting Type :
Surface Mount
Length :
3.3mm
Drain to Source Resistance :
103mOhm
Contact Plating :
Gold
Rds On (Max) @ Id, Vgs :
103mOhm @ 3.3A, 10V
Max Operating Temperature :
150°C
Fall Time (Typ) :
1.4 ns
Radiation Hardening :
No
Input Capacitance :
310pF
Rise Time :
1.3ns
Width :
3.3mm
Supplier Device Package :
8-MLP (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 50V
Drain to Source Voltage (Vdss) :
100V
Mount :
Surface Mount
Package / Case :
8-PowerWDFN
Datasheets
FDMC86106LZ
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMC86106LZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, FDMC86106LZ pinout, FDMC86106LZ datasheet PDF, FDMC86106LZ amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMC86106LZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDMC86106LZ


N-Channel Cut Tape (CT) 103mOhm @ 3.3A, 10V 310pF @ 50V 6nC @ 10V 100V 8-PowerWDFN

FDMC86106LZ Description


Fairchild Semiconductor's sophisticated PowerTrench? process, which includes Shielded Gate technology, is used to make these N-Channel logic Level MOSFETs. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.



FDMC86106LZ Features


  • Technology for Shielded Gate MOSFETs

  • At Vqs = 10 V, I= 3.3 A, Max ros(on)= 103 mQ.

  • At Vgs = 4.5 V, Iq = 2.7 A, MaxDsfon) =153 mQ.

  • Typical HBM ESD protection level > 3 KV (Note 4)

  • 100% UIL Approved and RoHS Compliant



FDMC86106LZ Applications


DC - DC Conversion


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