FDMC86102LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

2.5 ns

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

FET Type :

N-Channel

Series :

PowerTrench®

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

JESD-30 Code :

S-PDSO-N5

JESD-609 Code :

e4

Mount :

Surface Mount

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

30A

Length :

3.3mm

Turn On Delay Time :

7.1 ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 6.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

750μm

Rise Time :

2.3ns

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Dual

Resistance :

24mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 50V

Weight :

165.33333mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

41W

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Drain Current-Max (Abs) (ID) :

7A

Contact Plating :

Gold, Silver

Package / Case :

8-PowerWDFN

Width :

3.3mm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Factory Lead Time :

6 Weeks

Number of Terminations :

5

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Published :

2017

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7A Ta 18A Tc

Radiation Hardening :

No

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.3W Ta 41W Tc

Turn-Off Delay Time :

19 ns

ECCN Code :

EAR99

Nominal Vgs :

1.6 V