FDMC86102L

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Mfr.Part #
FDMC86102L
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 100V 7A/18A 8MLP
Stock
241,593
In Stock :
241,593

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
18A
Power Dissipation :
41W
Number of Pins :
8
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
7A
Factory Lead Time :
13 Weeks
ECCN Code :
EAR99
Turn-Off Delay Time :
19 ns
Vgs (Max) :
±20V
Published :
2010
REACH SVHC :
No SVHC
JESD-609 Code :
e4
Rise Time :
2.2ns
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
63 mJ
Transistor Element Material :
SILICON
Turn On Delay Time :
7.7 ns
Package / Case :
8-PowerWDFN
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
S-PDSO-N5
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Series :
PowerTrench®
Threshold Voltage :
1.8V
Height :
750μm
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
23m Ω @ 7A, 10V
Terminal Finish :
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Pbfree Code :
yes
Weight :
165.33333mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
30A
Terminal Position :
Dual
Length :
3.3mm
Width :
3.3mm
Lifecycle Status :
ACTIVE (Last Updated: 13 hours ago)
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
7A Ta 18A Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
FET Type :
N-Channel
Mount :
Surface Mount
Resistance :
24mOhm
Drain to Source Breakdown Voltage :
100V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Case Connection :
DRAIN
Number of Terminations :
5
Fall Time (Typ) :
2.4 ns
Input Capacitance (Ciss) (Max) @ Vds :
1330pF @ 50V
Power Dissipation-Max :
2.3W Ta 41W Tc
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC86102L from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-PowerWDFN, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, FDMC86102L pinout, FDMC86102L datasheet PDF, FDMC86102L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86102L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC86102L


N-Channel Tape & Reel (TR) 23m Ω @ 7A, 10V ±20V 1330pF @ 50V 22nC @ 10V 8-PowerWDFN

FDMC86102L Description


FDMC86102L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.



FDMC86102L Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A

  • Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A

  • Low Profile - 1 mm max in Power 33

  • RoHS Compliant



FDMC86102L Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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