FDMC86102L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

FET Type :

N-Channel

Published :

2010

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

13 Weeks

Height :

750μm

JESD-30 Code :

S-PDSO-N5

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7.7 ns

Turn-Off Delay Time :

19 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

5

Mounting Type :

Surface Mount

Rise Time :

2.2ns

Current - Continuous Drain (Id) @ 25°C :

7A Ta 18A Tc

Package / Case :

8-PowerWDFN

Continuous Drain Current (ID) :

18A

Threshold Voltage :

1.8V

Power Dissipation :

41W

Transistor Element Material :

SILICON

Pbfree Code :

yes

Weight :

165.33333mg

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

7A

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 50V

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Avalanche Energy Rating (Eas) :

63 mJ

Drain to Source Breakdown Voltage :

100V

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.3W Ta 41W Tc

REACH SVHC :

No SVHC

Resistance :

24mOhm

Pulsed Drain Current-Max (IDM) :

30A

Series :

PowerTrench®

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Length :

3.3mm

Fall Time (Typ) :

2.4 ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Width :

3.3mm

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No