FDMC86102L
- Mfr.Part #
- FDMC86102L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7A/18A 8MLP
- Stock
- 241,593
- In Stock :
- 241,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 18A
- Power Dissipation :
- 41W
- Number of Pins :
- 8
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 7A
- Factory Lead Time :
- 13 Weeks
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 19 ns
- Vgs (Max) :
- ±20V
- Published :
- 2010
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Rise Time :
- 2.2ns
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 63 mJ
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 7.7 ns
- Package / Case :
- 8-PowerWDFN
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- S-PDSO-N5
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Threshold Voltage :
- 1.8V
- Height :
- 750μm
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7A, 10V
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Pbfree Code :
- yes
- Weight :
- 165.33333mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 30A
- Terminal Position :
- Dual
- Length :
- 3.3mm
- Width :
- 3.3mm
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta 18A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Resistance :
- 24mOhm
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 2.4 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 50V
- Power Dissipation-Max :
- 2.3W Ta 41W Tc
- Datasheets
- FDMC86102L
FDMC86102L Documents

N-Channel Tape & Reel (TR) 23m Ω @ 7A, 10V ±20V 1330pF @ 50V 22nC @ 10V 8-PowerWDFN
FDMC86102L Description
FDMC86102L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMC86102L Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
-
Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
-
Low Profile - 1 mm max in Power 33
-
RoHS Compliant
FDMC86102L Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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