FDMC86102

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

4ns

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

72 mJ

Mount :

Surface Mount

FET Type :

N-Channel

ECCN Code :

EAR99

Width :

3.4mm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Power Dissipation :

2.3W

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Length :

3.4mm

Drain Current-Max (Abs) (ID) :

7A

Transistor Application :

SWITCHING

Number of Elements :

1

Fall Time (Typ) :

4 ns

Threshold Voltage :

3.1V

Number of Terminations :

5

Height :

950μm

REACH SVHC :

No SVHC

Factory Lead Time :

40 Weeks

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MO-240BA

Resistance :

24mOhm

Turn-Off Delay Time :

14 ns

Vgs (Max) :

±20V

Power Dissipation-Max :

2.3W Ta 41W Tc

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Pulsed Drain Current-Max (IDM) :

30A

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

7A Ta 20A Tc

Case Connection :

DRAIN

Continuous Drain Current (ID) :

20A

Number of Pins :

8

Weight :

32.13mg

JESD-30 Code :

S-PDSO-N5

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Input Capacitance (Ciss) (Max) @ Vds :

965pF @ 50V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

PowerTrench®

Lead Free :

Lead Free

Nominal Vgs :

3.1 V

Transistor Element Material :

SILICON

Turn On Delay Time :

8 ns

Terminal Finish :

Nickel/Palladium (Ni/Pd)