FDMC86012
- Mfr.Part #
- FDMC86012
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A POWER33
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- S-PDSO-N5
- Turn On Delay Time :
- 20 ns
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 5075pF @ 15V
- Turn-Off Delay Time :
- 43 ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Drain-source On Resistance-Max :
- 0.0027Ohm
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- JEDEC-95 Code :
- MO-240BA
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 23A, 4.5V
- Rise Time :
- 11ns
- Continuous Drain Current (ID) :
- 23A
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±12V
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 54W
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Avalanche Energy Rating (Eas) :
- 337 mJ
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerWDFN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 8 ns
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Weight :
- 152.7mg
- Pulsed Drain Current-Max (IDM) :
- 230A
- Datasheets
- FDMC86012

N-Channel Tape & Reel (TR) 2.7m Ω @ 23A, 4.5V ±12V 5075pF @ 15V 38nC @ 4.5V 8-PowerWDFN
FDMC86012 Description
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low RDS(on) has been maintained to
provide a sub-logic-level device.
FDMC86012 Features
Max rDS(on) = 2.7 m? at VGS = 4.5 V, ID = 23 A
Max rDS(on) = 4.7 m? at VGS = 2.5 V, ID = 17.5 A
High-performance technology for extremely low RDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant
FDMC86012 Applications
3.3 V input synchronous buck switch
Synchronous rectifier
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