FDMC86012
- Mfr.Part #
- FDMC86012
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A POWER33
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 5075pF @ 15V
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Vgs (Max) :
- ±12V
- Rise Time :
- 11ns
- Pulsed Drain Current-Max (IDM) :
- 230A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Continuous Drain Current (ID) :
- 23A
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0027Ohm
- Weight :
- 152.7mg
- JESD-30 Code :
- S-PDSO-N5
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 23A, 4.5V
- Pbfree Code :
- yes
- Turn On Delay Time :
- 20 ns
- Number of Terminations :
- 5
- Radiation Hardening :
- No
- Package / Case :
- 8-PowerWDFN
- Power Dissipation :
- 54W
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 12V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 8 ns
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- MO-240BA
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 337 mJ
- Turn-Off Delay Time :
- 43 ns
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- Datasheets
- FDMC86012
FDMC86012 Documents

N-Channel Tape & Reel (TR) 2.7m Ω @ 23A, 4.5V ±12V 5075pF @ 15V 38nC @ 4.5V 8-PowerWDFN
FDMC86012 Description
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low RDS(on) has been maintained to
provide a sub-logic-level device.
FDMC86012 Features
Max rDS(on) = 2.7 m? at VGS = 4.5 V, ID = 23 A
Max rDS(on) = 4.7 m? at VGS = 2.5 V, ID = 17.5 A
High-performance technology for extremely low RDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant
FDMC86012 Applications
3.3 V input synchronous buck switch
Synchronous rectifier
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