FDMC8554

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Published :

2006

Drain Current-Max (Abs) (ID) :

72A

Input Capacitance (Ciss) (Max) @ Vds :

3380pF @ 10V

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerWDFN

Drain-source On Resistance-Max :

0.005ohm

JESD-609 Code :

e4

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

23 Weeks

Fall Time (Typ) :

7 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

36A

Contact Plating :

Tin

Number of Pins :

8

Height :

950μm

Lead Free :

Lead Free

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

32 ns

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 16.5A, 10V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Continuous Drain Current (ID) :

16.5A

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2W Ta 41W Tc

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Width :

3mm

Terminal Position :

Dual

FET Type :

N-Channel

Rise Time :

10ns

Weight :

165.33333mg

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Mounting Type :

Surface Mount

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99