FDMC8554

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Turn-Off Delay Time :

32 ns

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Input Capacitance (Ciss) (Max) @ Vds :

3380pF @ 10V

Package / Case :

8-PowerWDFN

Transistor Element Material :

SILICON

Turn On Delay Time :

13 ns

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

72A

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

36A

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

ECCN Code :

EAR99

Terminal Form :

Flat

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

23 Weeks

JESD-609 Code :

e4

Number of Elements :

1

Width :

3mm

Terminal Position :

Dual

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

8

Fall Time (Typ) :

7 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5m Ω @ 16.5A, 10V

Series :

PowerTrench®

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Power Dissipation-Max :

2W Ta 41W Tc

Power Dissipation :

2W

Continuous Drain Current (ID) :

16.5A

Length :

3mm

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.005ohm

Rise Time :

10ns

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

950μm

Weight :

165.33333mg

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)