FDMC8462
- Mfr.Part #
- FDMC8462
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 14A/20A POWER33
- Stock
- 116
- In Stock :
- 116
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Gold
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 3 ns
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 27 ns
- Terminal Finish :
- Nickel/Palladium (Ni/Pd)
- Turn On Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 3.3mm
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 8
- Drain Current-Max (Abs) (ID) :
- 64A
- Series :
- PowerTrench®
- Resistance :
- 5.8mOhm
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2660pF @ 20V
- Power Dissipation-Max :
- 2W Ta 41W Tc
- Width :
- 3.3mm
- Threshold Voltage :
- 2V
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Terminal Position :
- Dual
- Package / Case :
- 8-PowerTDFN
- Continuous Drain Current (ID) :
- 14A
- Factory Lead Time :
- 43 Weeks
- Rise Time :
- 4ns
- Power Dissipation :
- 2W
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 40V
- JESD-30 Code :
- S-PDSO-N5
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 13.5A, 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 50A
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 20A Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Weight :
- 32.13mg
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Height :
- 1.05mm
- Datasheets
- FDMC8462

N-Channel Tape & Reel (TR) 5.8m Ω @ 13.5A, 10V ±20V 2660pF @ 20V 43nC @ 10V 8-PowerTDFN
FDMC8462 Description
This N-Channel MOSFET is made utilizing the cutting-edge Power Trench? process from Fairchild Semiconductor, which has been carefully designed to reduce on-state resistance while maintaining exceptional switching performance. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
FDMC8462 Features
-
Maximum r°s(on) is 5.8mQ at 10V and 13.5A.
-
At Vcs = 4 5V, Iq = 11 RA, Max rDS(on)= R OmO
-
Low Profile - maximum of 1 mm in Power 33
-
Completely UIL tested
-
REACH Compliant
FDMC8462 Applications
Switching applications
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