FDMC8360LET40

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Mfr.Part #
FDMC8360LET40
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 40V 27A/141A POWER33
Stock
28,533
In Stock :
28,533

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
2.1m Ω @ 27A, 10V
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Weight :
152.7mg
Mount :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
19 Weeks
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain to Source Voltage (Vdss) :
40V
HTS Code :
8541.29.00.95
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 20V
Package / Case :
8-PowerWDFN
Continuous Drain Current (ID) :
141A
ECCN Code :
EAR99
Power Dissipation-Max :
2.8W Ta 75W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Reach Compliance Code :
not_compliant
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
27A Ta 141A Tc
Operating Temperature :
-55°C~175°C TJ
Datasheets
FDMC8360LET40
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC8360LET40 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, Operating Temperature:-55°C~175°C TJ, FDMC8360LET40 pinout, FDMC8360LET40 datasheet PDF, FDMC8360LET40 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC8360LET40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC8360LET40


N-Channel Tape & Reel (TR) 2.1m Ω @ 27A, 10V ±20V 5300pF @ 20V 80nC @ 10V 40V 8-PowerWDFN

FDMC8360LET40                                 Description

This   N-Channel MOSFET is   produced using Fair   child   Semiconductor's advanced Power   Trenchprocess that   incorporates shielded gate technology. This process has been optimized for the on-state resistance and vet maintain superior switching performance.

 

FDMC8360LET40                                Application

=DC-DC Conversion

 

FDMC8360LET40                                Features

Shielded Gate MOSFET Technology

Max rpsfon) = 2.1 mΩ at Vgs = 10 V, lb = 27 A

Max ps(on) = 3.1 mΩ at VGs = 4.5 V, b = 22 A

High Performance Technology for Extremely Low rpsjor

Termination is Lead-free

100% UIL Tested

RoHs Compliant

 


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