FDMC8296
- Mfr.Part #
- FDMC8296
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A/18A 8MLP
- Stock
- 20,821
- In Stock :
- 20,821
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 52A
- JESD-609 Code :
- e4
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Terminations :
- 5
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.3W Ta 27W Tc
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 44A
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 1385pF @ 15V
- Terminal Form :
- NO LEAD
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Factory Lead Time :
- 23 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Weight :
- 210mg
- Rise Time :
- 3ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power Dissipation :
- 2.3W
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 12A, 10V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 19 ns
- Continuous Drain Current (ID) :
- 12A
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerWDFN
- Fall Time (Typ) :
- 2 ns
- Case Connection :
- DRAIN
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 18A Tc
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- S-PDSO-N5
- Datasheets
- FDMC8296
FDMC8296 Documents

N-Channel Tape & Reel (TR) 8m Ω @ 12A, 10V ±20V 1385pF @ 15V 23nC @ 10V 8-PowerWDFN
FDMC8296 Description
The FDMC8296 N-Channel MOSFET is manufactured utilizing a sophisticated Power Trench? process that is specifically designed to reduce on-state resistance.
FDMC8296 Features
-
Max rDS(on) = 8.0mΩ at VGS = 10V, ID = 12A
-
Max rDS(on) = 13.0mΩ at VGS = 4.5V, ID = 10A
-
High-performance trench technology for extremely low rDS(on)
-
Termination is Lead-free and RoHS Compliant
FDMC8296 Applications
-
Power Management and load switching applications
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