FDMC7672S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Element Configuration :

Single

Case Connection :

DRAIN

Contact Plating :

Gold

Pbfree Code :

yes

Weight :

200mg

Avalanche Energy Rating (Eas) :

60 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

Number of Terminations :

5

Mount :

Surface Mount

Factory Lead Time :

23 Weeks

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 15V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Pins :

8

Nominal Vgs :

1.6 V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

18A

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-N5

FET Type :

N-Channel

Radiation Hardening :

No

Length :

3.3mm

Series :

PowerTrench®, SyncFET™

Width :

3.3mm

Published :

2010

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

45A

Packaging :

Tape and Reel (TR)

Height :

750μm

Turn On Delay Time :

11 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.006Ohm

Threshold Voltage :

1.6V

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

6m Ω @ 14.8A, 10V

Additional Feature :

ULTRA-LOW RESISTANCE

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.3W Ta 36W Tc

Fall Time (Typ) :

3 ns

Turn-Off Delay Time :

26 ns

Rise Time :

4ns

Current - Continuous Drain (Id) @ 25°C :

14.8A Ta 18A Tc

Power Dissipation :

36W

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 1mA