FDMC6688P
- Mfr.Part #
- FDMC6688P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 14A/56A 8PQFN
- Stock
- 4,362
- In Stock :
- 4,362
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 14A, 4.5V
- Number of Pins :
- 8
- DS Breakdown Voltage-Min :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Weight :
- 26.8mg
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 226A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation-Max :
- 2.3W Ta 30W Tc
- JEDEC-95 Code :
- MO-240BA
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Drain Current-Max (Abs) (ID) :
- 14A
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±8V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 56A Tc
- Drain-source On Resistance-Max :
- 0.0065ohm
- Series :
- PowerTrench®
- JESD-30 Code :
- S-PDSO-N5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerWDFN
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current (ID) :
- 56A
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- NO LEAD
- Input Capacitance (Ciss) (Max) @ Vds :
- 7435pF @ 10V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Factory Lead Time :
- 10 Weeks
- JESD-609 Code :
- e3
- Datasheets
- FDMC6688P

P-Channel Tape & Reel (TR) 6.5m Ω @ 14A, 4.5V ±8V 7435pF @ 10V 61nC @ 4.5V 20V 8-PowerWDFN
FDMC6688P Description
FDMC6688P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench@ process that has been optimized for rDs(ON), switching performance, and ruggedness. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for rDs(ON), switching performance, and ruggedness.
FDMC6688P Features
-
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
-
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
-
Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
-
High-performance trench technology for extremely low rDS(on)
-
High power and current handling capability in a widely used surface mount package
-
Lead-free and RoHS Compliant
FDMC6688P Applications
-
Load Switch
-
Battery Management
-
Power Management
-
Reverse Polarity Protection
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