FDMC6679AZ
- Mfr.Part #
- FDMC6679AZ
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 11.5A/20A 8MLP
- Stock
- 1,470
- In Stock :
- 1,470
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Width :
- 3.3mm
- Number of Terminations :
- 5
- JESD-30 Code :
- S-PDSO-N5
- Radiation Hardening :
- No
- Length :
- 3.3mm
- Turn On Delay Time :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 11.5A, 10V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Gold
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 3970pF @ 15V
- Drain to Source Breakdown Voltage :
- -30V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- 11.5A
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta 20A Tc
- Power Dissipation :
- 41W
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 25V
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Height :
- 750μm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 63 ns
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 32A
- JESD-609 Code :
- e4
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Package / Case :
- 8-PowerWDFN
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 23 Weeks
- Mount :
- Surface Mount
- Threshold Voltage :
- -1.8V
- Rise Time :
- 14ns
- Power Dissipation-Max :
- 2.3W Ta 41W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Fall Time (Typ) :
- 46 ns
- Number of Elements :
- 1
- Resistance :
- 10MOhm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±25V
- Weight :
- 165.33333mg
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Datasheets
- FDMC6679AZ

P-Channel Tape & Reel (TR) 10m Ω @ 11.5A, 10V ±25V 3970pF @ 15V 91nC @ 10V 30V 8-PowerWDFN
FDMC6679AZ Description
FDMC6679AZ is a -30v P-Channel Power Trench? MOSFET. The onsemi FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDMC6679AZ is in the Power-33-8 package with 41W power dissipation.
FDMC6679AZ Features
-
Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
-
Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
-
HBM ESD protection level of 8 kV typical(note 3)
-
Extended VGSS range (-25 V) for battery applications
-
High-performance trench technology for extremely low rDS(on)
-
High power and current handling capability
-
Termination is Lead-free and RoHS Compliant
FDMC6679AZ Applications
-
Load Switch in Notebook
-
Server
-
Notebook Battery Pack Power Management
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