FDMC6675BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

14.4m Ω @ 9.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2865pF @ 15V

Drain Current-Max (Abs) (ID) :

40A

Number of Elements :

1

Series :

PowerTrench®

Mounting Type :

Surface Mount

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pulsed Drain Current-Max (IDM) :

32A

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Threshold Voltage :

-1.9V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Turn-Off Delay Time :

44 ns

Number of Terminations :

5

REACH SVHC :

No SVHC

Pbfree Code :

yes

FET Type :

P-Channel

Terminal Position :

Dual

Vgs (Max) :

±25V

Turn On Delay Time :

11 ns

Height :

750μm

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 20A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

26 ns

Power Dissipation :

2.3W

Length :

3.3mm

Package / Case :

8-PowerWDFN

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time :

10ns

Power Dissipation-Max :

2.3W Ta 36W Tc

Width :

3.3mm

Case Connection :

DRAIN

Weight :

200mg

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

S-PDSO-N5

Published :

2010

Resistance :

14.4MOhm

Mount :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Continuous Drain Current (ID) :

9.5A

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

23 Weeks

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

-30V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE