FDMC6675BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Weight :

200mg

Drain to Source Breakdown Voltage :

-30V

Series :

PowerTrench®

Transistor Application :

SWITCHING

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Mode :

ENHANCEMENT MODE

Length :

3.3mm

Pulsed Drain Current-Max (IDM) :

32A

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

2.3W Ta 36W Tc

Factory Lead Time :

23 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Threshold Voltage :

-1.9V

Pbfree Code :

yes

Additional Feature :

ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 20A Tc

Turn-Off Delay Time :

44 ns

Element Configuration :

Single

JESD-30 Code :

S-PDSO-N5

Number of Terminations :

5

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Package / Case :

8-PowerWDFN

Fall Time (Typ) :

26 ns

Mounting Type :

Surface Mount

Resistance :

14.4MOhm

Rds On (Max) @ Id, Vgs :

14.4m Ω @ 9.5A, 10V

Radiation Hardening :

No

Terminal Position :

Dual

REACH SVHC :

No SVHC

Width :

3.3mm

JESD-609 Code :

e4

Drain Current-Max (Abs) (ID) :

40A

Turn On Delay Time :

11 ns

Mount :

Surface Mount

Rise Time :

10ns

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

9.5A

Height :

750μm

Input Capacitance (Ciss) (Max) @ Vds :

2865pF @ 15V

Lead Free :

Lead Free

Power Dissipation :

2.3W

Number of Elements :

1