FDMC610P
- Mfr.Part #
- FDMC610P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 80A POWER33
- Stock
- 4,142
- In Stock :
- 4,142
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 3.4mm
- Drain to Source Voltage (Vdss) :
- 12V
- Reach Compliance Code :
- not_compliant
- Rise Time :
- 37ns
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 8V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 87 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Power Dissipation-Max :
- 2.4W Ta 48W Tc
- Number of Terminations :
- 5
- JESD-30 Code :
- S-PDSO-N5
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 200A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Drain Current-Max (Abs) (ID) :
- 22A
- Continuous Drain Current (ID) :
- 80A
- Factory Lead Time :
- 10 Weeks
- Turn On Delay Time :
- 24 ns
- Width :
- 3.4mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 193 ns
- Vgs (Max) :
- ±8V
- Number of Channels :
- 1
- Terminal Form :
- NO LEAD
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 6V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Weight :
- 32.13mg
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 99nC @ 4.5V
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Drain-source On Resistance-Max :
- 0.0039Ohm
- JEDEC-95 Code :
- MO-240BA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 1mm
- Drain to Source Breakdown Voltage :
- -12V
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 22A, 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Terminal Position :
- Dual
- Datasheets
- FDMC610P
FDMC610P Documents

P-Channel Tape & Reel (TR) 3.9m Ω @ 22A, 4.5V ±8V 1250pF @ 6V 99nC @ 4.5V 12V 8-PowerTDFN
FDMC610P Description
FDMC610P is a -12V P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC610P has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC610P has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMC610P Features
-
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
-
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
-
State-of-the-art switching performance
-
Lower output capacitance, gate resistance, and gate charge boost efficiency
-
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
-
RoHS Compliant
FDMC610P Applications
-
High side switching for high-end computing
-
High power density DC-DC synchronous buck converter
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