FDMC610P
- Mfr.Part #
- FDMC610P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 80A POWER33
- Stock
- 4,142
- In Stock :
- 4,142
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 200A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 6V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -12V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Terminal Form :
- NO LEAD
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Height :
- 1mm
- Drain to Source Voltage (Vdss) :
- 12V
- Gate to Source Voltage (Vgs) :
- 8V
- Width :
- 3.4mm
- Factory Lead Time :
- 10 Weeks
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- JESD-30 Code :
- S-PDSO-N5
- Series :
- PowerTrench®
- Mount :
- Surface Mount
- JEDEC-95 Code :
- MO-240BA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Power Dissipation-Max :
- 2.4W Ta 48W Tc
- Drain Current-Max (Abs) (ID) :
- 22A
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 80A
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Weight :
- 32.13mg
- Package / Case :
- 8-PowerTDFN
- Turn-Off Delay Time :
- 193 ns
- Length :
- 3.4mm
- Reach Compliance Code :
- not_compliant
- Fall Time (Typ) :
- 87 ns
- Turn On Delay Time :
- 24 ns
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 99nC @ 4.5V
- Vgs (Max) :
- ±8V
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 22A, 4.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 8
- Rise Time :
- 37ns
- Drain-source On Resistance-Max :
- 0.0039Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Datasheets
- FDMC610P

P-Channel Tape & Reel (TR) 3.9m Ω @ 22A, 4.5V ±8V 1250pF @ 6V 99nC @ 4.5V 12V 8-PowerTDFN
FDMC610P Description
FDMC610P is a -12V P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC610P has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC610P has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMC610P Features
-
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
-
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
-
State-of-the-art switching performance
-
Lower output capacitance, gate resistance, and gate charge boost efficiency
-
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
-
RoHS Compliant
FDMC610P Applications
-
High side switching for high-end computing
-
High power density DC-DC synchronous buck converter
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