FDMC5614P-B8

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Voltage Rating :

-

FET Feature :

-

Shell Size, MIL :

-

Features :

Alignment Disc

FET Type :

P-Channel

Ingress Protection :

Environment Resistant

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1055 pF @ 30 V

Supplier Device Package :

8-WDFN (3.3x3.3)

Product Status :

Active

Insert Material :

-

Applications :

Military

Drain to Source Voltage (Vdss) :

60 V

Package / Case :

8-PowerWDFN

Shell Material :

Aluminum

Vgs(th) (Max) @ Id :

3V @ 250µA

Backshell Material, Plating :

-

Cable Opening :

-

Current Rating (Amps) :

-

Number of Positions :

32

Shielding :

Shielded

Contact Finish Thickness - Mating :

50.0µin (1.27µm)

Operating Temperature :

-65°C ~ 175°C

Base Product Number :

TVP00DT

Shell Size - Insert :

13-32

Mounting Type :

Panel Mount, Through Hole

Contact Finish - Mating :

Gold

Shell Finish :

Durmalon™

Package :

Bulk

Contact Material :

COPPER ALLOY

Current - Continuous Drain (Id) @ 25°C :

5.7A (Ta), 13.5A (Tc)

Series :

MIL-DTL-38999 Series III, Tri-Start™ HD

Material Flammability Rating :

-

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Power Dissipation (Max) :

2.1W (Ta), 42W (Tc)

Orientation :

B

Connector Type :

Receptacle, Male Pins

Primary Material :

Metal

Rds On (Max) @ Id, Vgs :

100mOhm @ 5.7A, 10V

Color :

-

Fastening Type :

Threaded

Termination :

Solder

Mounting Feature :

Flange