FDMC5614P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

100m Ω @ 5.7A, 10V

Weight :

200mg

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Rise Time :

11ns

Threshold Voltage :

-1.95V

Number of Elements :

1

Lead Free :

Lead Free

Current Rating :

-5.7A

Turn-Off Delay Time :

32 ns

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

23A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

ECCN Code :

EAR99

Package / Case :

8-PowerWDFN

Power Dissipation :

2.1W

Published :

2006

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1055pF @ 30V

Continuous Drain Current (ID) :

-5.7A

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

Power Dissipation-Max :

2.1W Ta 42W Tc

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Factory Lead Time :

10 Weeks

Height :

725μm

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Width :

3.3mm

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

JESD-30 Code :

S-PDSO-F5

Mounting Type :

Surface Mount

Length :

3.3mm

Fall Time (Typ) :

11 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-60V

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta 13.5A Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Resistance :

100MOhm

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

JESD-609 Code :

e4

Number of Terminations :

5

Voltage - Rated DC :

-60V