FDMC510P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

165.33333mg

Case Connection :

DRAIN

Radiation Hardening :

No

Continuous Drain Current (ID) :

12A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 4.5V

Length :

3.3mm

JESD-609 Code :

e4

Factory Lead Time :

23 Weeks

Transistor Application :

SWITCHING

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

7860pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

8m Ω @ 12A, 4.5V

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A Ta 18A Tc

Drain Current-Max (Abs) (ID) :

54A

Turn-Off Delay Time :

338 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerWDFN

Power Dissipation-Max :

2.3W Ta 41W Tc

Fall Time (Typ) :

170 ns

REACH SVHC :

No SVHC

Height :

750μm

Turn On Delay Time :

15 ns

Mount :

Surface Mount

Rise Time :

34ns

Published :

2006

Terminal Position :

Dual

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N5

Number of Pins :

8

Contact Plating :

Gold

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

37 mJ

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

50A

Width :

3.3mm

Number of Elements :

1

Threshold Voltage :

-500mV

Power Dissipation :

41W

Mounting Type :

Surface Mount