FDMC3612
- Mfr.Part #
- FDMC3612
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 3.3A/16A 8MLP
- Stock
- 14,871
- In Stock :
- 14,871
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 800μm
- Lead Free :
- Lead Free
- Package / Case :
- 8-PowerWDFN
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Published :
- 2006
- Rise Time :
- 2.8ns
- Turn On Delay Time :
- 7.4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Position :
- Dual
- Avalanche Energy Rating (Eas) :
- 32 mJ
- Length :
- 3.3mm
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Power Dissipation :
- 2.3W
- Nominal Vgs :
- 2.5 V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 2 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Max Junction Temperature (Tj) :
- 150°C
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Weight :
- 180mg
- JESD-609 Code :
- e4
- JEDEC-95 Code :
- MO-240BA
- Contact Plating :
- Gold
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Power Dissipation-Max :
- 2.3W Ta 35W Tc
- JESD-30 Code :
- S-PDSO-N5
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 3.3A, 10V
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Ta 16A Tc
- Turn-Off Delay Time :
- 19 ns
- Threshold Voltage :
- 2.5V
- Width :
- 3.3mm
- Continuous Drain Current (ID) :
- 3.3A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- FDMC3612
FDMC3612 Documents

N-Channel Tape & Reel (TR) 110m Ω @ 3.3A, 10V ±20V 880pF @ 50V 21nC @ 10V 8-PowerWDFN
FDMC3612 Description
The FDMC3612 N-Channel MOSFET is made with ON Semiconductor's innovative Power Trench? technology, which has been specifically optimized to reduce on-state resistance while maintaining excellent switching performance.
FDMC3612 Features
-
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
-
Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
-
Low Profile - 1 mm max in Power 33
-
100% UIL Tested
-
RoHS Compliant
FDMC3612 Applications
-
DC - DC Conversion
-
PSE Switch
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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