FDMC3612

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

7.4 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

2.3W Ta 35W Tc

Transistor Application :

SWITCHING

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

3.3mm

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Lead Free :

Lead Free

Radiation Hardening :

No

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

100V

Nominal Vgs :

2.5 V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

2.8ns

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta 16A Tc

Published :

2006

Package / Case :

8-PowerWDFN

Pbfree Code :

yes

Power Dissipation :

2.3W

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 50V

Fall Time (Typ) :

2 ns

JESD-30 Code :

S-PDSO-N5

RoHS Status :

ROHS3 Compliant

Length :

3.3mm

Continuous Drain Current (ID) :

3.3A

Avalanche Energy Rating (Eas) :

32 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Threshold Voltage :

2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

110m Ω @ 3.3A, 10V

Turn-Off Delay Time :

19 ns

REACH SVHC :

No SVHC

FET Type :

N-Channel

JESD-609 Code :

e4

Transistor Element Material :

SILICON

Element Configuration :

Single

Height :

800μm

Contact Plating :

Gold

Weight :

180mg

Mounting Type :

Surface Mount

Mount :

Surface Mount

Vgs (Max) :

±20V

JEDEC-95 Code :

MO-240BA