FDMC3020DC
- Mfr.Part #
- FDMC3020DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17A/40A DLCOOL33
- Stock
- 40,876
- In Stock :
- 40,876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Dual Cool™, PowerTrench®
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1385pF @ 15V
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 40A
- Turn On Delay Time :
- 9 ns
- Power Dissipation :
- 3W
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- JEDEC-95 Code :
- MO-240BA
- Radiation Hardening :
- No
- Width :
- 3.3mm
- Transistor Application :
- SWITCHING
- Height :
- 950μm
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 3W Ta 50W Tc
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.3mm
- Case Connection :
- DRAIN
- Rise Time :
- 3ns
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 17A
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 6.25m Ω @ 12A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- S-PDSO-N5
- Drain-source On Resistance-Max :
- 0.00625Ohm
- Threshold Voltage :
- 1.9V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 60 mJ
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 2 ns
- Package / Case :
- 8-PowerTDFN
- Turn-Off Delay Time :
- 19 ns
- Weight :
- 32.13mg
- Pbfree Code :
- yes
- Datasheets
- FDMC3020DC

N-Channel Tape & Reel (TR) 6.25m Ω @ 12A, 10V ±20V 1385pF @ 15V 23nC @ 10V 8-PowerTDFN
FDMC3020DC Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1385pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 40A.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.9V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDMC3020DC Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
a threshold voltage of 1.9V
FDMC3020DC Applications
There are a lot of ON Semiconductor
FDMC3020DC applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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