FDMC2610
- Mfr.Part #
- FDMC2610
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- N-CHANNEL ULTRAFET TRENCH MOSFET
- Stock
- 10,210
- In Stock :
- 10,210
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Resistance :
- 200mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 100V
- JESD-609 Code :
- e4
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Current Rating :
- 9.5A
- Continuous Drain Current (ID) :
- 9.5A
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 2.2A, 10V
- Series :
- UniFET™
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta 9.5A Tc
- Height :
- 950μm
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Published :
- 2017
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Drain to Source Breakdown Voltage :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 13ns
- Weight :
- 165.33333mg
- Power Dissipation-Max :
- 2.1W Ta 42W Tc
- Turn-Off Delay Time :
- 29 ns
- Length :
- 3mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 2.2A
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 16 ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Turn On Delay Time :
- 17 ns
- Width :
- 3mm
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 220V
- Package / Case :
- 8-PowerWDFN
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.1W
- Mount :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Transistor Element Material :
- SILICON
- Datasheets
- FDMC2610
N-Channel Tape & Reel (TR) 200m Ω @ 2.2A, 10V ±20V 960pF @ 100V 18nC @ 10V 8-PowerWDFN
FDMC2610 Description
The N-channel MOSFET is a rugged gate version of advanced power trench technology. It has been optimized for power management applications.
FDMC2610 Features
Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
RoHS Compliant
FDMC2610 Applications
This product is general usage and suitable for many different applications.
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