FDMC2523P
- Mfr.Part #
- FDMC2523P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 3,019
- In Stock :
- 3,019
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 10 Weeks
- Length :
- 3mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 3A
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Current Rating :
- -3A
- Series :
- QFET®
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Number of Terminations :
- 5
- JESD-609 Code :
- e4
- Rise Time :
- 11ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Turn On Delay Time :
- 15 ns
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 210mg
- Drain Current-Max (Abs) (ID) :
- 3A
- Terminal Form :
- Flat
- Drain to Source Breakdown Voltage :
- -150V
- Width :
- 3mm
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 1.5A, 10V
- Package / Case :
- 8-PowerWDFN
- Power Dissipation-Max :
- 42W Tc
- Threshold Voltage :
- 3.8V
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Drain to Source Voltage (Vdss) :
- 150V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 42W
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 13 ns
- Height :
- 800μm
- JESD-30 Code :
- S-PDSO-F5
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Turn-Off Delay Time :
- 19 ns
- Resistance :
- 1.5Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -150V
- Datasheets
- FDMC2523P
P-Channel Tape & Reel (TR) 1.5 Ω @ 1.5A, 10V ±30V 270pF @ 25V 9nC @ 10V 150V 8-PowerWDFN
FDMC2523P Description
The ON Semiconductor FDMC2523P Transistor is a planar stripe DMOS QFET? P-channel enhancement-mode Power MOSFET. This cutting-edge technology has been specifically designed to reduce ON-state resistance, provide excellent switching performance, and withstand high energy pulses in avalanche and commutation modes. It is highly suited for low voltage applications such as audio amplifiers and switching DC-to-DC converters with excellent efficiency.
FDMC2523P Features
-
6.2nC typical low gate charge
-
10pF typical low Crss
-
Improved dV/dt capability
-
Fast switching
FDMC2523P Applications
-
Audio amplifier
-
High efficiency switching DC-to-DC converters
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