FDMC2514SDC

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.3mm

Turn-Off Delay Time :

26 ns

Element Configuration :

Single

Radiation Hardening :

No

JEDEC-95 Code :

MO-240BA

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N5

Vgs(th) (Max) @ Id :

3V @ 1mA

Pulsed Drain Current-Max (IDM) :

200A

Power Dissipation-Max :

3W Ta 60W Tc

Height :

950μm

Factory Lead Time :

8 Weeks

Additional Feature :

ULTRA-LOW RESISTANCE

JESD-609 Code :

e3

Fall Time (Typ) :

3 ns

Threshold Voltage :

1.7V

Number of Pins :

8

FET Type :

N-Channel

Power Dissipation :

3W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2009

Case Connection :

DRAIN SOURCE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1

Series :

Dual Cool™, PowerTrench®, SyncFET™

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Width :

3.3mm

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0035Ohm

Nominal Vgs :

1.7 V

Drain to Source Breakdown Voltage :

25V

Continuous Drain Current (ID) :

24A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

40A

Transistor Application :

SWITCHING

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

24A Ta 40A Tc

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 22.5A, 10V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2705pF @ 13V

Package / Case :

8-PowerTDFN

Weight :

32.13mg

Rise Time :

3.6ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V