FDMC15N06
- Mfr.Part #
- FDMC15N06
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 2.4A/15A 8MLP
- Stock
- 1,812
- In Stock :
- 1,812
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 15A, 10V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 15A
- Factory Lead Time :
- 7 Weeks
- Transistor Application :
- SWITCHING
- Height :
- 500μm
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 9.5 ns
- Packaging :
- Cut Tape (CT)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Dual
- Drain Current-Max (Abs) (ID) :
- 2.4A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Drain to Source Breakdown Voltage :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 10V
- Number of Pins :
- 8
- Weight :
- 200mg
- Rise Time :
- 36.5ns
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- S-PDSO-N5
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Ta 15A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.09Ohm
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 22 ns
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerWDFN
- Number of Terminations :
- 5
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 35W
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.3W Ta 35W Tc
- Width :
- 3.3mm
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 22.5 ns
- Length :
- 3.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Datasheets
- FDMC15N06
FDMC15N06 Documents

N-Channel Cut Tape (CT) 900m Ω @ 15A, 10V ±20V 350pF @ 25V 11.5nC @ 10V 8-PowerWDFN
FDMC15N06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 36 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.There is no drain current on this device since the maximum continuous current it can conduct is 2.4A.As a result of its turn-off delay time, which is 22.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FDMC15N06 Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 22.5 ns
based on its rated peak drain current 60A.
FDMC15N06 Applications
There are a lot of ON Semiconductor
FDMC15N06 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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