FDMC15N06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.3mm

JESD-30 Code :

S-PDSO-N5

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

36 mJ

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

7 Weeks

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta 15A Tc

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Turn On Delay Time :

9.5 ns

Number of Elements :

1

Mounting Type :

Surface Mount

FET Type :

N-Channel

Power Dissipation :

35W

Number of Terminations :

5

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Length :

3.3mm

Drain Current-Max (Abs) (ID) :

2.4A

Power Dissipation-Max :

2.3W Ta 35W Tc

Height :

500μm

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

15A

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

60A

Pbfree Code :

yes

Transistor Application :

SWITCHING

Weight :

200mg

Drain-source On Resistance-Max :

0.09Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 10V

Packaging :

Cut Tape (CT)

Package / Case :

8-PowerWDFN

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

22 ns

ECCN Code :

EAR99

Number of Pins :

8

JESD-609 Code :

e3

Turn-Off Delay Time :

22.5 ns

Rise Time :

36.5ns

Drain to Source Breakdown Voltage :

55V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

900m Ω @ 15A, 10V