FDMC0310AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.3mm

Length :

3.3mm

Number of Terminations :

5

JESD-609 Code :

e4

Continuous Drain Current (ID) :

21A

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

11 ns

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Mount :

Surface Mount

Rise Time :

5ns

Number of Pins :

8

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

Factory Lead Time :

23 Weeks

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Series :

PowerTrench®, SyncFET™

JEDEC-95 Code :

MO-240AA

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Pbfree Code :

yes

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Transistor Application :

SWITCHING

Terminal Form :

Flat

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Temperature :

-55°C~150°C TJ

Height :

800μm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

19A Ta 21A Tc

Fall Time (Typ) :

4 ns

Weight :

165.33333mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3165pF @ 15V

Drain-source On Resistance-Max :

0.0043Ohm

Package / Case :

8-PowerWDFN

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 1mA

Avalanche Energy Rating (Eas) :

33 mJ

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Element Configuration :

Single

Power Dissipation-Max :

2.4W Ta 36W Tc

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 19A, 10V

Power Dissipation :

2.4W