FDJ1028N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Pin Count :

6

Drain-source On Resistance-Max :

0.09Ohm

JESD-30 Code :

R-PDSO-F6

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 10V

Drain Current-Max (Abs) (ID) :

3.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.2A, 4.5V

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Flat

Package / Case :

SC75-6 FLMP

Transistor Element Material :

SILICON

Terminal Finish :

NICKEL PALLADIUM GOLD

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

12A

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

3.2A

Number of Elements :

2

Series :

PowerTrench®

Power - Max :

1.5W

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED