FDJ1027P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e4

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

12A

Drain Current-Max (Abs) (ID) :

2.8A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 10V

Terminal Form :

Flat

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.16Ohm

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

160m Ω @ 2.8A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.8A

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Number of Elements :

2

JESD-30 Code :

R-PDSO-F6

Terminal Finish :

NICKEL PALLADIUM GOLD

Reach Compliance Code :

Unknown

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC75-6 FLMP

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power - Max :

900mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED