FDI3632

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Drain to Source Resistance :

7.5mOhm

Rds On (Max) @ Id, Vgs :

9mOhm @ 80A, 10V

Turn-Off Delay Time :

96 ns

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Continuous Drain Current (ID) :

80A

Fall Time (Typ) :

46 ns

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Voltage - Rated DC :

100V

Rise Time :

39ns

Max Operating Temperature :

175°C

Number of Elements :

1

Turn On Delay Time :

30 ns

Power Dissipation-Max :

310W Tc

Current - Continuous Drain (Id) @ 25°C :

12A Ta 80A Tc

Supplier Device Package :

I2PAK (TO-262)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

FET Type :

N-Channel

Rds On Max :

9 mΩ

Input Capacitance :

6nF

Current Rating :

80A

Power Dissipation :

310W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Series :

PowerTrench®

Weight :

2.084g

RoHS Status :

RoHS Compliant

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V