FDI33N25TU

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Mfr.Part #
FDI33N25TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 250V 33A I2PAK
Stock
5,682
In Stock :
5,682

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Vgs (Max) :
±30V
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
33A
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
2.135pF @ 25V
Power Dissipation-Max :
235W Tc
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
33A Tc
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Terminal Finish :
MATTE TIN
DS Breakdown Voltage-Min :
250V
Pin Count :
3
Peak Reflow Temperature (Cel) :
Not Applicable
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Drain to Source Voltage (Vdss) :
250V
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Rds On (Max) @ Id, Vgs :
94m Ω @ 16.5A, 10V
Reach Compliance Code :
Unknown
Number of Elements :
1
Drain-source On Resistance-Max :
0.094Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Series :
UniFET™
Additional Feature :
FAST SWITCHING, AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
132A
Avalanche Energy Rating (Eas) :
918 mJ
Surface Mount :
No
Vgs(th) (Max) @ Id :
5V @ 250μA
Datasheets
FDI33N25TU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDI33N25TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FDI33N25TU pinout, FDI33N25TU datasheet PDF, FDI33N25TU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDI33N25TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDI33N25TU


N-Channel Tube 94m Ω @ 16.5A, 10V ±30V 2.135pF @ 25V 48nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA

FDI33N25TU Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 918 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.135pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 33A.Pulsed drain current is maximum rated peak drain current 132A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FDI33N25TU Features


the avalanche energy rating (Eas) is 918 mJ
based on its rated peak drain current 132A.
a 250V drain to source voltage (Vdss)


FDI33N25TU Applications


There are a lot of Rochester Electronics, LLC
FDI33N25TU applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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