FDI33N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

235W Tc

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

132A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

33A

Series :

UniFET™

Avalanche Energy Rating (Eas) :

918 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2.135pF @ 25V

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

yes

DS Breakdown Voltage-Min :

250V

Surface Mount :

No

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

250V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain-source On Resistance-Max :

0.094Ohm