FDI038AN06A0
- Mfr.Part #
- FDI038AN06A0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A/80A I2PAK
- Stock
- 28,010
- In Stock :
- 28,010
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Avalanche Energy Rating (Eas) :
- 625 mJ
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 80A, 10V
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Factory Lead Time :
- 9 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 80A Tc
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 310W Tc
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Weight :
- 2.084g
- Input Capacitance (Ciss) (Max) @ Vds :
- 6400pF @ 25V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn-Off Delay Time :
- 34 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Voltage - Rated DC :
- 60V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 310W
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.0038Ohm
- Rise Time :
- 144ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 80A
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Turn On Delay Time :
- 17 ns
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-262AB
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ) :
- 60 ns
- Published :
- 2013
- Current Rating :
- 80A
- Packaging :
- Tube
- Datasheets
- FDI038AN06A0
FDI038AN06A0 Documents

N-Channel Tube 3.8m Ω @ 80A, 10V ±20V 6400pF @ 25V 124nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
FDI038AN06A0 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 625 mJ.The maximum input capacitance of this device is 6400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 34 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.
FDI038AN06A0 Features
the avalanche energy rating (Eas) is 625 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 34 ns
FDI038AN06A0 Applications
There are a lot of ON Semiconductor
FDI038AN06A0 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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