FDI038AN06A0

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation :

310W

Weight :

2.084g

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSIP-T3

Turn On Delay Time :

17 ns

Current Rating :

80A

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

34 ns

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Continuous Drain Current (ID) :

80A

Factory Lead Time :

9 Weeks

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Pbfree Code :

yes

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

60 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

17A Ta 80A Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain-source On Resistance-Max :

0.0038Ohm

Rise Time :

144ns

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 80A, 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JEDEC-95 Code :

TO-262AB

Power Dissipation-Max :

310W Tc

Avalanche Energy Rating (Eas) :

625 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Lead Free :

Lead Free

Mount :

Through Hole

Vgs (Max) :

±20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA