FDI025N06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

226nC @ 10V

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

120A

Number of Terminations :

3

FET Type :

N-Channel

Power Dissipation-Max :

395W Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

265A Tc

Mounting Type :

Through Hole

JESD-609 Code :

e3

Number of Elements :

1

Drain-source On Resistance-Max :

0.0025Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

1060A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 75A, 10V

Series :

PowerTrench®

Avalanche Energy Rating (Eas) :

2531 mJ

Pbfree Code :

yes

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Position :

Single

Surface Mount :

No

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

14.885pF @ 25V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Qualification Status :

COMMERCIAL