FDI030N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.29mm

Turn On Delay Time :

39 ns

Series :

PowerTrench®

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Through Hole

Turn-Off Delay Time :

54 ns

Pulsed Drain Current-Max (IDM) :

772A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

9815pF @ 25V

Weight :

2.387g

Rise Time :

178ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mount :

Through Hole

Continuous Drain Current (ID) :

193A

Published :

2013

JESD-609 Code :

e3

Radiation Hardening :

No

Width :

9.65mm

Number of Pins :

3

Factory Lead Time :

9 Weeks

Packaging :

Tube

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

33 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Power Dissipation-Max :

231W Tc

Power Dissipation :

231W

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING