FDH50N50
- Mfr.Part #
- FDH50N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 48A TO247-3
- Stock
- 761
- In Stock :
- 761
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 6.46pF @ 25V
- Drain-source On Resistance-Max :
- 0.105Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 137nC @ 10V
- JEDEC-95 Code :
- TO-247AD
- Drain to Source Voltage (Vdss) :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 192A
- Series :
- UniFET™
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 1868 mJ
- Drain Current-Max (Abs) (ID) :
- 48A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 625W Tc
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 500V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 24A, 10V
- Pin Count :
- 3
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDH50N50

N-Channel Tube 105m Ω @ 24A, 10V ±30V 6.46pF @ 25V 137nC @ 10V 500V TO-247-3
FDH50N50 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1868 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6.46pF @ 25V.48A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 192A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
FDH50N50 Features
the avalanche energy rating (Eas) is 1868 mJ
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
FDH50N50 Applications
There are a lot of Rochester Electronics, LLC
FDH50N50 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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