FDH50N50_F133

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

192A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1868 mJ

Power Dissipation-Max :

625W Tc

DS Breakdown Voltage-Min :

500V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

48A

Factory Lead Time :

6 Weeks

Current - Continuous Drain (Id) @ 25°C :

48A Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

105m Ω @ 24A, 10V

Terminal Position :

Single

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AB

Drain-source On Resistance-Max :

0.105Ohm

Transistor Element Material :

SILICON

Packaging :

Tube

Reach Compliance Code :

not_compliant

Series :

UniFET™

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6460pF @ 25V

Pbfree Code :

yes

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V