FDH50N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Avalanche Energy Rating (Eas) :

1868 mJ

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

48A

Pulsed Drain Current-Max (IDM) :

192A

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.105Ohm

FET Type :

N-Channel

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

105m Ω @ 24A, 10V

Power Dissipation-Max :

625W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

No

Series :

UniFET™

Input Capacitance (Ciss) (Max) @ Vds :

6.46pF @ 25V

Drain to Source Voltage (Vdss) :

500V

JEDEC-95 Code :

TO-247AD

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Pin Count :

3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Vgs (Max) :

±30V