FDD7N60NZTM
- Mfr.Part #
- FDD7N60NZTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.5A DPAK
- Stock
- 14,002
- In Stock :
- 14,002
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 730pF @ 25V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 1.25 Ω @ 2.75A, 10V
- Pulsed Drain Current-Max (IDM) :
- 22A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 5.5A
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Width :
- 6.22mm
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Power Dissipation :
- 90W
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Length :
- 6.73mm
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 2.39mm
- Weight :
- 260.37mg
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 90W Tc
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 40 ns
- Series :
- UniFET-II™
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 25V
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 17.5 ns
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Datasheets
- FDD7N60NZTM

N-Channel Tape & Reel (TR) 1.25 Ω @ 2.75A, 10V ±25V 730pF @ 25V 17nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD7N60NZTM Overview
The maximum input capacitance of this device is 730pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5.5A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 22A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FDD7N60NZTM Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 22A.
FDD7N60NZTM Applications
There are a lot of ON Semiconductor
FDD7N60NZTM applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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