FDD7N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Continuous Drain Current (ID) :

5A

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.5A, 10V

Width :

6.22mm

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Drain to Source Breakdown Voltage :

200V

Lead Free :

Lead Free

Fall Time (Typ) :

10 ns

Threshold Voltage :

5V

Pbfree Code :

yes

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Turn On Delay Time :

9 ns

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Turn-Off Delay Time :

13 ns

Power Dissipation-Max :

43W Tc

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Weight :

260.37mg

Drain Current-Max (Abs) (ID) :

5A

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

2.39mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Resistance :

690mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2004

Vgs (Max) :

±30V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Series :

UniFET™

Length :

6.73mm

Rise Time :

30ns

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

62.5 mJ

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Power Dissipation :

43W