FDD7N20TM
- Mfr.Part #
- FDD7N20TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5A D-PAK
- Stock
- 18,274
- In Stock :
- 18,274
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 6.7nC @ 10V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 13 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 200V
- Width :
- 6.22mm
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 2.39mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Length :
- 6.73mm
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Published :
- 2004
- Threshold Voltage :
- 5V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 5A
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 690m Ω @ 2.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Rise Time :
- 30ns
- Power Dissipation-Max :
- 43W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- UniFET™
- Case Connection :
- DRAIN
- Factory Lead Time :
- 4 Weeks
- Resistance :
- 690mOhm
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Continuous Drain Current (ID) :
- 5A
- Avalanche Energy Rating (Eas) :
- 62.5 mJ
- Fall Time (Typ) :
- 10 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 43W
- Weight :
- 260.37mg
- JEDEC-95 Code :
- TO-252AA
- Turn On Delay Time :
- 9 ns
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Contact Plating :
- Tin
- Datasheets
- FDD7N20TM

N-Channel Tape & Reel (TR) 690m Ω @ 2.5A, 10V ±30V 250pF @ 25V 6.7nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Description
The FDD7N20TM is a 200V, 5A, 690mΩ N-Channel UniFETTM MOSFET. The high voltage UniFETTM MOSFET family from Fairchild Semiconductor is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. For switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
Features
-
100% Avalanche Tested
-
ROHS Compliant
-
RDS(on) = 580mΩ(Typ.) @ VGS = 10V, ID = 2.5A
-
Low Gate Charge (Typ. 5 nC)
-
Low CRSS (Typ. 5 pF)
Applications
-
Uninterruptible Power
-
AC-DC Power Supply
-
LCD/LED/PDP TV
-
Consumer Appliances
-
Lighting
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