FDD7N25LZTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Number of Elements :

1

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

25A

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Series :

UniFET™

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Length :

6.73mm

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

ECCN Code :

EAR99

Pbfree Code :

yes

Resistance :

550mOhm

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Power Dissipation :

56W

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn-Off Delay Time :

75 ns

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

15ns

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 25V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

250V

Continuous Drain Current (ID) :

6.2A

Height :

2.39mm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Weight :

260.37mg

Mounting Type :

Surface Mount

FET Type :

N-Channel

Power Dissipation-Max :

56W Tc

Radiation Hardening :

No

Mount :

Surface Mount

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

550m Ω @ 3.1A, 10V

Fall Time (Typ) :

30 ns