FDBL0210N80
- Mfr.Part #
- FDBL0210N80
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerSFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, N
- Stock
- 24,631
- In Stock :
- 24,631
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 240A
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 40V
- Terminal Form :
- Flat
- Power Dissipation-Max :
- 357W Tj
- Peak Reflow Temperature (Cel) :
- 245
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Drain-source On Resistance-Max :
- 0.002Ohm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 80V
- Weight :
- 850.0521mg
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 80A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F2
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 169nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 512 mJ
- JEDEC-95 Code :
- MO-299A
- Published :
- 2017
- Package / Case :
- 8-PowerSFN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDBL0210N80
N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 10000pF @ 40V 169nC @ 10V 80V 8-PowerSFN
FDBL0210N80 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 512 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10000pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 240A. Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FDBL0210N80 Features
the avalanche energy rating (Eas) is 512 mJ
a continuous drain current (ID) of 240A
a 80V drain to source voltage (Vdss)
FDBL0210N80 Applications
There are a lot of ON Semiconductor
FDBL0210N80 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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