FDBL0110N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

850.0521mg

Number of Terminations :

2

JEDEC-95 Code :

MO-299A

JESD-30 Code :

R-PSSO-F2

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

13650pF @ 30V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

300A

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

8-PowerSFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

1.1m Ω @ 80A, 10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

PowerTrench®

Lead Free :

Lead Free

Number of Elements :

1

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

429W Tj

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

8

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0011Ohm

Avalanche Energy Rating (Eas) :

1167 mJ

FET Type :

N-Channel