FDB9406-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

176W Tj

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Rise Time :

48ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Turn-Off Delay Time :

50 ns

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

176W

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

7710pF @ 25V

Mounting Type :

Surface Mount

Factory Lead Time :

5 Weeks

Number of Terminations :

2

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

Automotive, AEC-Q101, PowerTrench®

Turn On Delay Time :

28 ns

Continuous Drain Current (ID) :

110A

Case Connection :

DRAIN

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Weight :

1.31247g

Fall Time (Typ) :

20 ns

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)